FNK FNK12N12T
N-Channel Power MOSFET
DESCRIPTION
TheFNK12N12T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FNK12N12TGENERAL FEATURES
● VDS =120V,ID =120A RDS(ON) < 7.2mΩ @ VGS=10V (Typ:5.8mΩ) Schematic diagram● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply TO-247 top view Package Marking and Ordering Information Device Marking Device Device Package FNK12N12T FNK12N12T TO-247 Reel Size - Tape width - Quantity -
ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage