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FNK3415 - P-Channel Power MOSFET

Description

The FNK3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V.

This device is suitable for use as a load switch or in PWM applications .It is ESD protested.

Features

  • VDS = -20V,ID =-4A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=-4.5V ESD Rating: 2500V HBM.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package.

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Datasheet Details

Part number FNK3415
Manufacturer FNK
File Size 344.67 KB
Description P-Channel Power MOSFET
Datasheet download datasheet FNK3415 Datasheet

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Full PDF Text Transcription

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FNK3415 FNK P-Channel Enhancement Mode Power MOSFET Description The FNK3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = -20V,ID =-4A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=-4.
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