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FNK3416 - N-Channel Power MOSFET

Description

The FNK3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications .It is ESD protested.

Features

  • VDS = 20V,ID =6A RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON).

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Datasheet Details

Part number FNK3416
Manufacturer FNK
File Size 702.64 KB
Description N-Channel Power MOSFET
Datasheet download datasheet FNK3416 Datasheet

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Full PDF Text Transcription

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FNK3416 FNK N-Channel Enhancement Mode Power MOSFET Description The FNK3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = 20V,ID =6A RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) <22mΩ @ VGS=4.
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