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FNK4408 - N-Channel MOSFET

Description

The FNK4408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and fast switching.

This device makes an excellent high side switch for notebook CPU core DC-DC conversion.

Features

  • VDS (V) = 30V ID = 12A (VGS = 10V) RDS(ON) < 11.3mΩ (VGS = 10V) RDS(ON) < 14.3m Ω (VGS = 4.5V) SD SD SD GD SOIC-8 D SOP-8 top view G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current AF TA=70°C Pulsed Drain Current B Avalanche Current B Repetitive Avalanche Energy B L=0.3mH ID IDM IAV EAV Power Dissipation TA=25°C TA=70°C PD Junction and Storage Temperature Range T.

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Datasheet Details

Part number FNK4408
Manufacturer FNK
File Size 1.49 MB
Description N-Channel MOSFET
Datasheet download datasheet FNK4408 Datasheet
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FNK4408 FNK4408 N-Channel Enhancement Mode Field Effect Transistor General Description The FNK4408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and fast switching. This device makes an excellent high side switch for notebook CPU core DC-DC conversion. Features VDS (V) = 30V ID = 12A (VGS = 10V) RDS(ON) < 11.3mΩ (VGS = 10V) RDS(ON) < 14.3m Ω (VGS = 4.5V) SD SD SD GD SOIC-8 D SOP-8 top view G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current AF TA=70°C Pulsed Drain Current B Avalanche Current B Repetitive Avalanche Energy B L=0.
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