FNK FNK5530PD
The FNK55P30PD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.| Part No. | FNK5530PD |
|---|---|
| Datasheet | FNK5530PD Download |
| Manufacturer |  FNK |
| Description | P-Channel Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
It can be used in a wide variety of applications.GENERAL FEATURES
● VDS =-55V,ID =-30A RDS(ON) <40mΩ @ VGS=-10V● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation Schematic diagram Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply TO-252-2L top view Package Marking and Ordering Information Device Marking Device Device Package FNK5530PD FNK5530PD TO-252 Reel Size - Tape width - Quantity -
ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100
