FNK5530PD
FNK5530PD is P-Channel Power MOSFET manufactured by FNK.
Description
The FNK55P30PD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS =-55V,ID =-30A RDS(ON) <40mΩ @ VGS=-10V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
Schematic diagram
Application
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply
TO-252-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
TO-252
Reel Size
- Tape width
- Quantity
- Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(TC=100...
