FNK55H11 Datasheet N-Channel Power MOSFET

Manufacturer: FNK

Datasheet Details

The FNK 55H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

General

FNK55H11 FNK N-Channel Enhancement Mode Power MOSFET.

VDS =55V,ID =110A RDS(ON) < 6m @ VGS=10V (Typ:4.5m ) Schematic diagram High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Special process technology for high ESD capability.