FNK55H11
FNK55H11 is N-Channel Power MOSFET manufactured by FNK.
Description
The FNK 55H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
VDS =55V,ID =110A
RDS(ON) < 6m @ VGS=10V
(Typ:4.5m )
Schematic diagram
High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Special process technology for high ESD capability
Application
Power switching application Hard switched and high frequency circuits Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED! 100% Vds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
55H11
TO-220-3L
Reel Size
- Tape width
- Quantity
- Absolute Maximum Ratings (TA=25
Parameter
Drain-Source Voltage Gate-Source Voltage
Drain Current-Continuo...
