Datasheet4U Logo Datasheet4U.com

FNK55H11 - N-Channel Power MOSFET

Description

The FNK 55H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =55V,ID =110A RDS(ON) < 6m @ VGS=10V (Typ:4.5m ) Schematic diagram High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Special process technology for high ESD capability.

📥 Download Datasheet

Datasheet Details

Part number FNK55H11
Manufacturer FNK
File Size 241.23 KB
Description N-Channel Power MOSFET
Datasheet download datasheet FNK55H11 Datasheet

📁 Similar Datasheet

Other Datasheets by FNK

Full PDF Text Transcription

Click to expand full text
FNK55H11 FNK N-Channel Enhancement Mode Power MOSFET Description The FNK 55H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =55V,ID =110A RDS(ON) < 6m @ VGS=10V (Typ:4.
Published: |