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FNK75N08BD - N-Channel Power MOSFET

Description

TheFNK75N08BD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =80V,ID =110A RDS(ON) < 7mΩ @ VGS=10V (Typ:5.7mΩ).
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability Schematic diagram.

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Datasheet Details

Part number FNK75N08BD
Manufacturer FNK
File Size 1.37 MB
Description N-Channel Power MOSFET
Datasheet download datasheet FNK75N08BD Datasheet
Additional preview pages of the FNK75N08BD datasheet.

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FNK N-Channel Enhancement Mode Power MOSFET Description TheFNK75N08BD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FNK75N08BD General Features ● VDS =80V,ID =110A RDS(ON) < 7mΩ @ VGS=10V (Typ:5.
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