IS3405 Description
ST I S 3405 S ep.15 2005 P -C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S ID -3A F E AT UR E S ( m W ) Max R DS (ON) S uper high dense cell design for low R DS (ON ). -30V 100 @ V G S = -10V 130 @ V G S = -4.5V R ugged and reliable. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.