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3DG2216 - SILICON NPN TRANSISTOR

Key Features

  • High gain, good hFE linearity. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC IE PC Tj Tstg 50 45 4.0 50 -50 300 150 -55～150 V V V mA mA mW ℃ ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition Rating Max Unit Min Typ VCEO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob Gpe CC. rbb′ IC=10mA VCB=50V VEB=3.0V VCE=12.5V IC=15mA IC=15mA VCE=12.5V VCB=10V VCB=10V IE=0 IB=0 IE=0 IC=0 IC=12.5mA IB=1.5mA IB=1.5mA IC=12.5mA f=30MHz 45 0.1 0.1 40 140 0.2 1.5.

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Datasheet Details

Part number 3DG2216
Manufacturer FOSHAN BLUE ROCKET
File Size 216.49 KB
Description SILICON NPN TRANSISTOR
Datasheet download datasheet 3DG2216 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SC2216(3DG2216) :。 NPN /SILICON NPN TRANSISTOR Purpose: TV final picture IF amplifier applications. :,hFE 。 Features: High gain, good hFE linearity. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC IE PC Tj Tstg 50 45 4.0 50 -50 300 150 -55～150 V V V mA mA mW ℃ ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition Rating Max Unit Min Typ VCEO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob Gpe CC.rbb′ IC=10mA VCB=50V VEB=3.0V VCE=12.5V IC=15mA IC=15mA VCE=12.5V VCB=10V VCB=10V IE=0 IB=0 IE=0 IC=0 IC=12.5mA IB=1.5mA IB=1.5mA IC=12.5mA f=30MHz 45 0.1 0.1 40 140 0.2 1.5 300 0.8 29 2.0 36 25 V μA μA V V MHz pF dB ps VCC=12.5V IE=-12.5mA f=45MHz IE=-1.0mA f=30MHz FOSHAN BLUE ROCKET ELECTRONICS CO., LTD. Free Datasheet http://www.