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CS8N65F - N-Channel MOSFET

Key Features

  • Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 650 V ID(Tc=25℃) 7.5 A ID(Tc=100℃) 4.6 A IDM 30 A VGSS ±30 V EAS 230 mJ EAR 10 mJ IAR 7.5 A PD(Tc=25℃) 48 W TJ,TSTG -55 to 150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Conditions BVDSS VGS=0V ID=250μA IDSS VDS=650V VDS=480V VGS=0V TC=125℃ IGSS VGS=±30V VDS=0V VGS(th) VDS=VGS ID=250μA RDS(on) VGS=10V ID=3.75A gFS VDS=40V ID=3.75A VSD VGS.

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Datasheet Details

Part number CS8N65F
Manufacturer FOSHAN BLUE ROCKET
File Size 227.53 KB
Description N-Channel MOSFET
Datasheet download datasheet CS8N65F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BRF8N65(CS8N65F) N-Channel MOSFET/N MOS : DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,,。 Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 650 V ID(Tc=25℃) 7.5 A ID(Tc=100℃) 4.6 A IDM 30 A VGSS ±30 V EAS 230 mJ EAR 10 mJ IAR 7.5 A PD(Tc=25℃) 48 W TJ,TSTG -55 to 150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Conditions BVDSS VGS=0V ID=250μA IDSS VDS=650V VDS=480V VGS=0V TC=125℃ IGSS VGS=±30V VDS=0V VGS(th) VDS=VGS ID=250μA RDS(on) VGS=10V ID=3.75A gFS VDS=40V ID=3.75A VSD VGS=0V IS=7.5A Ciss Coss VDS=25V VGS=0V f=1.0MHz Crss td(on) tr td(off) VDD=300V ID=7.