10N120BND Datasheet Hgtg10n120bnd

Manufacturer: Fairchild (now onsemi)

Overview: Data Sheet HGTG10N120BND December 2001 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family.

Datasheet Details

Part number	10N120BND
Manufacturer	Fairchild (now onsemi)
File Size	109.80 KB
Description	HGTG10N120BND
Datasheet	10N120BND-FairchildSemiconductor.pdf

Key Features

of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT used is the development type TA49290. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switching.

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