12N60C3D Datasheet Hgtg12n60c3d

Manufacturer: Fairchild (now onsemi)

Overview: HGTG12N60C3D Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60C3D is a MOS gated high voltage switching device combining the.

Datasheet Details

Part number	12N60C3D
Manufacturer	Fairchild (now onsemi)
File Size	158.02 KB
Description	HGTG12N60C3D
Datasheet	12N60C3D_FairchildSemiconductor.pdf

Key Features

of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in anti parallel www. DataSheet4U. com with the IGBT is the development type TA49061. The IGBT is ideal for many high voltage switching.

More Datasheets from Fairchild (now onsemi)

Part Number	Description
12N50FT	FDPF12N50FT
12N50T	N-Channel MOSFET

Datasheet Details

Key Features

More Datasheets from Fairchild (now onsemi)

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