12N60C3D Datasheet | Fairchild Semiconductor

features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25o C and 150o C. The IGBT used is the development type TA49123. The diode used in anti parallel .. with the IGBT is the development type TA49061. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential. Formerly Developmental Type TA49117. Features - 24A, 600V at TC = 25o C - Typical Fall Time - - - . 210ns at TJ = 150o C - Short Circuit Rating - Low Conduction Loss - Hyperfast Anti-Parallel Diode Packaging JEDEC STYLE TO-247 Ordering Information PART NUMBER HGTG12N60C3D PACKAGE TO-247 BRAND G12N60C3D NOTE: When ordering, use the entire part number. Symbol Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 ©2001 Fairchild Semiconductor Corporation HGTG12N60C3D Rev. B HGTG12N60C3D Absolute Maximum Ratings TC = 25o C, Unless Otherwise Specified HGTG12N60C3D 600 24 12 15 96 ±20 ±30 24A at 600V 104 0.83 -40 to 150 260 4 13 UNITS V A A A A V V W W/o C o C o C µs µs Collector to Emitter Voltage - - - - - - - - - .BVCES Collector Current Continuous At TC = 25o C - - - - - - - - - - - . . IC25 At TC = 110o C - - - - . . ....