Key Features
- Drain Current -ID= 12A@ TC=25℃
- Drain Source Voltage- : VDSS= 600V (Min)
- Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max)
- Avalanche Energy Specified
- Fast Switching
- Simple Drive Requirements
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- DESCRITION
- Designed for high efficiency switch mode power supply.
Datasheets by Manufacturer
| Part Number |
Manufacturer |
Description |
|
12N60K-MT
|
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
12N60
|
GFD |
600V N-Channel MOSFET |
|
12N60B
|
CHONGQING PINGYANG |
N-CHANNEL MOSFET |
|
12N60-C
|
Unisonic Technologies |
N-CHANNEL MOSFET |
|
12N60H
|
CHONGQING PINGYANG |
N-CHANNEL MOSFET |
|
12N60F
|
CHONGQING PINGYANG |
N-CHANNEL MOSFET |
|
12N60CD1
|
IXYS |
IGBT |
|
12N60
|
Unisonic Technologies |
N-CHANNEL MOSFET |
|
12N60C3D
|
Fairchild Semiconductor |
HGTG12N60C3D |
|
12N60F
|
GFD |
600V N-Channel MOSFET |
