12N60 Datasheet PDF | Unisonic Technologies

Unisonic Technologies 12N60

The UTC 12N60 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTC’s proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply.

Part No.	12N60
Datasheet	12N60 Download
Manufacturer	Unisonic Technologies
Description	N-CHANNEL MOSFET
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DESCRIPTION

To minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode the advanced technology has been especially tailored.

FEATURES

*Pb-free plating product number:12N60L * RDS(ON) = 0.7Ω @VGS = 10 V * Ultra low gate charge ( typical 42 nC ) * Low reverse transfer capacitance ( CRSS = typical 25 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Package TO-220 TO-220F Pin Assignment 1 2 3 G D S G D S Packing Tube Tube Ordering Number Normal Lead Free Plating 12N60-x-TA3-T 12N60L-x-TA3-T 12N60-x-TF3-T 12N60L-x-TF3-T Note: Pin Assignment: G: Gate D: Drain S: Source Copyright © 2008 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-170.A 12N60

ABSOLUTE MAXIMUM RATINGS

(TC = 25 , unless otherwise specified) PARAMETER SYMBOL 12N60-A 12N60-B Power MOSFET RATINGS UNIT 600 V Drain-Source Voltage VDS...

12N60 Datasheets by Manufacturer

4 datasheets

Part Number	Manufacturer
12N60	Nell Power Semiconductor
12N60	CHONGQING PINGYANG
12N60	Inchange Semiconductor
12N60	GFD