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13N80 - FQA13N80

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Key Features

  • 12.6A, 800V, RDS(on) = 0.75Ω @VGS = 10 V.
  • Low gate charge ( typical 68 nC).
  • Low Crss ( typical 30pF) www. DataSheet4U. com.
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability ®.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FQA13N80 800V N-Channel MOSFET September 2006 QFET FQA13N80 800V N-Channel MOSFET Features • 12.6A, 800V, RDS(on) = 0.75Ω @VGS = 10 V • Low gate charge ( typical 68 nC) • Low Crss ( typical 30pF) www.DataSheet4U.com • Fast switching • 100% avalanche tested • Improved dv/dt capability ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.