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16N03L - RFD16N03L

General Description

The RFD16N03L and RFD16N03LSM are N-channel power MOSFETs manufactured using the MegaFET process.

This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance.

Key Features

  • 16A, 30V.
  • rDS(ON) = 0.022Ω.
  • Temperature Compensating PSPICE Model.
  • Can be Driven Directly from CMOS, NMOS, and TTL Circuits.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • +175 oC JEDEC TO-252AA DRAIN (FLANGE) Operating Temperature.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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S E M I C O N D U C T O R RFD16N03L, RFD16N03LSM 16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs Packaging JEDEC TO-251AA SOURCE DRAIN GATE DRAIN (FLANGE) December 1995 Features • 16A, 30V • rDS(ON) = 0.022Ω • Temperature Compensating PSPICE Model • Can be Driven Directly from CMOS, NMOS, and TTL Circuits • Peak Current vs Pulse Width Curve • UIS Rating Curve • +175 oC JEDEC TO-252AA DRAIN (FLANGE) Operating Temperature Description The RFD16N03L and RFD16N03LSM are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance.