Datasheet Summary
S E M I C O N D U C T O R
RFD16N03L, RFD16N03LSM
16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs
Packaging
JEDEC TO-251AA
SOURCE DRAIN GATE DRAIN (FLANGE)
December 1995
Features
- 16A, 30V
- rDS(ON) = 0.022Ω
- Temperature pensating PSPICE Model
- Can be Driven Directly from CMOS, NMOS, and TTL Circuits
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- +175 oC
JEDEC TO-252AA
DRAIN (FLANGE)
Operating Temperature
Description
The RFD16N03L and RFD16N03LSM are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in...