16N03L
Overview
The RFD16N03L and RFD16N03LSM are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance.
- 16A, 30V
- rDS(ON) = 0.022Ω
- Temperature Compensating PSPICE Model
- Can be Driven Directly from CMOS, NMOS, and TTL Circuits
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- +175 oC
