16N06G
Overview
- 50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain DDD
- G S SS +0.040.21 -0.02 Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage ˄VGS=0V˅ Gate-Source Voltage ˄VDS=0V˅ Continuous Drain Current Pulsed Drain Current TC=25ć TC=100ć Power Dissipation Thermal - to-Abmient Junction Temperature Storage Temperature Range TC=25ć TC=100ć Symbol VDS VGS ID IDM PD RthJA TJ Tstg Rating 60 ±20 20 14 80 2.5 1.6 50 150 -55 to 150 Unit V A W ć/W ć 1 SMD Type N-Channel Trench Power MOSFET EMB16N06G MOSFET Ƶ Electrical Characteristics Ta = 25ć Parameter Drain-Source Breakdown Voltage Drain-to-Source Leakage Current Gate-to-Source Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance O
