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16N06G Datasheet N-channel Trench Power MOSFET

Manufacturer: Kexin Semiconductor

Overview: SMD Type N-Channel Trench Power MOSFET EMB16N06G MOSFET Ƶ.

Key Features

  • ƽ VDS (V) = 60V ƽ ID = 20 A (VGS = ±20V) ƽ RDS(ON) ˘ 15m¡ (VGS =10V) SOP-8 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain DDD D G S SS +0.040.21 -0.02 Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage ˄VGS=0V˅ Gate-Source Voltage ˄VDS=0V˅ Continuous Drain Current Pulsed Drain Current TC=25ć TC=100ć Power Dissipation Thermal Resistance. Junction- to-Abmient Junction Temperature Storage Temperature Range TC=25ć TC=100ć Symbol VDS VGS ID IDM P.

16N06G Distributor