20N60A4D Datasheet Hgtg20n60a4d

Manufacturer: Fairchild (now onsemi)

Overview: HGTG20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltage switching device combining the.

Datasheet Details

Part number	20N60A4D
Manufacturer	Fairchild (now onsemi)
File Size	175.11 KB
Description	HGTG20N60A4D
Datasheet	20N60A4D_FairchildSemiconductor.pdf

Key Features

of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49339. The diode used in anti-parallel is the development type TA49372. This IGBT is ideal for many high voltage switching.

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Brand Logo	Part Number	Description	Manufacturer
	20N60A4D	N-Channel IGBT	ON Semiconductor

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Datasheet Details

Key Features

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