Fairchild Semiconductor 2N5245
N-Channel RF Amplifier
| Part No. | 2N5245 |
|---|---|
| Datasheet | 2N5245 Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | N-Channel RF Amplifier |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
* Ta=25°C unless otherwise noted Symbol VDG VGS IGF TJ, TSTG Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range Ratings 30 -30 10 -55 ~ 150 Units V V mA °C * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.ELECTRICAL CHARACTERISTICS
Ta=25°C unless otherwise noted Symbol Off Characteristics V(BR)GSS IGSS VGS(off) IDSS gfs goss Parameter Test Condition IG = 1.0µA, VDS = 0 VGS = 25V, VDS = 0 VDS = 15V, ID = 1.0nA VDS = 15V, VGS = 0 VGS = 0V, VDS = 15V, f = 1.0kHz VGS = 0V, VDS = 15V, f = 1.0kHz -1.0 5 4500 Min. -30 -1.0 -0.6 15 11000 50 Max. Units V nA V mA µmhos µmhos Gate-Source Breakdwon Voltage Gate Reverse Current Gate-Source Cut...
