GENERAL DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
Drain-Gate Voltage Source Gate Voltage Drain Current Forward Gate Current Total Device Dissipation <s> 25°C (Derate above 25°C) Operating Junction Temperature Range Storage Temperature Range Lead Temperature (1/16" from case for 10 seconds) 30V 30V 30 mA 50 mA 360 mW 2.88mW/°C -65 C to +150 C -65°Cto+150°C 300 C (4.572) D.I DO (2.5401 MAX t a.o?5 ID.635) 0.014-0.016 I 0.150-0.1 B0 jl Qfm |— [0.356-0.406) -»-| - (3.B10-4.572} __| |__ (0 381 , 3 LEADS Q.10D «-j ,'—-10° NOM,(2.S40| ,V /' !/ <' DIA PIN CIRCLE PIN FET 1 D 2 S 3 G ELECTRICAL CHARACTERISTICS
<25°c unless otherwise noted) PARAMETER CONDITIONS less Gate Reverse Current bvgss Gate-Source Breakdown Voltage Gate-Source Cutoff VGS(off) Voltage iDSS gfs Saturation Drain Current Common-Source Forward Transconductance Common-Source Output 9os Conductance Re Wfs> Common-Source Forward Transconductance Re (Vos) Common-Source Output Conductance Re lvisl Qss Common-Source Input Conductance Comm...
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