Fairchild Semiconductor 2N5401
PNP General Purpose Amplifier
ABSOLUTE MAXIMUM RATINGS
Ta=25°C unless otherwise noted Symbol Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Value -160 -150 -5 -600 625 150 -55 ~ 150 Units V V V mA mW °C °CELECTRICAL CHARACTERISTICS
Ta=25°C unless otherwise noted Symbol Parameter Test Condition BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (sat) fT Collector-Base Breakdown Voltage * Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Current Gain Bandwidth Product IC= -100µA, IE=0 IC= -1mA, IB=0 IE= -10µA, IC=0 VCB= -120V, IE=0 VEB= -3V, IC=0 IC= -1mA, VCE= -5V IC= -10mA, VCE= -5V IC= -50mA, VCE= -5V IC= -10mA, IB= -1mA IC= -50mA, IB= -5mA IC= -10mA, IB= -1mA IC= -50mA, IB= -5mA IC= -10mA, VCE= -10V, f=100MHz Cob Output C...