2N5401
2N5401 is EPITAXIAL PLANAR PNP TRANSISTOR manufactured by KEC.
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.
Features
High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V Low Leakage Current. : ICBO=-50nA(Max.) @VCB=-120V Low Saturation Voltage : VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA Low Noise : NF=8dB (Max.)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation
(Ta=25 ) Collector Power Dissipation
(Tc=25 ) Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC IB
Tj Tstg
RATING -160 -150 -5 -600 -100
150 -55 150
UNIT V V V mA mA mW
EPITAXIAL...
