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2N5401 - EPITAXIAL PLANAR PNP TRANSISTOR

Key Features

  • High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V Low Leakage Current. : ICBO=-50nA(Max. ) @VCB=-120V Low Saturation Voltage : VCE(sat)=-0.5V(Max. ) @IC=-50mA, IB=-5mA Low Noise : NF=8dB (Max. ).

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Datasheet Details

Part number 2N5401
Manufacturer KEC
File Size 30.36 KB
Description EPITAXIAL PLANAR PNP TRANSISTOR
Datasheet download datasheet 2N5401 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V Low Leakage Current. : ICBO=-50nA(Max.) @VCB=-120V Low Saturation Voltage : VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA Low Noise : NF=8dB (Max.) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Ta=25 ) Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC PC Tj Tstg RATING -160 -150 -5 -600 -100 625 1.5 150 -55 150 UNIT V V V mA mA mW W L M C 2N5401 EPITAXIAL PLANAR PNP TRANSISTOR BC JA KE G D H FF 1 23 N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.