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2N5401S - EPITAXIAL PLANAR PNP TRANSISTOR

Key Features

  • High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V Low Leakage Current. : ICBO=-50nA(Max. ) @VCB=-120V Low Saturation Voltage : VCE(sat)=-0.5V(Max. ) @IC=-50mA, IB=-5mA Low Noise : NF=8dB (Max. ).

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Datasheet Details

Part number 2N5401S
Manufacturer KEC
File Size 342.79 KB
Description EPITAXIAL PLANAR PNP TRANSISTOR
Datasheet download datasheet 2N5401S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V Low Leakage Current. : ICBO=-50nA(Max.) @VCB=-120V Low Saturation Voltage : VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA Low Noise : NF=8dB (Max.) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO -160 Collector-Emitter Voltage VCEO -150 Emitter-Base Voltage VEBO -5 Collector Current IC -600 Base Current IB -100 Collector Power Dissipation PC * 350 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Note : * Package Mounted On 99.5% Alumina 10 8 0.6 ) UNIT V V V mA mA mW 2N5401S EPITAXIAL PLANAR PNP TRANSISTOR E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.