2N5401S Description
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.
2N5401S Key Features
- Package Mounted On 99.5% Alumina 10 8 0.6 )
- V(BR)CEO IC=-1mA, IB=0
- Collector-Emitter Saturation Voltage
- Base-Emitter Saturation Voltage
- hFE(1) hFE(2) hFE(3) VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2
- Pulse Test : Pulse Width 300 S, Duty Cycle 2%
- MAX. -50 -50 -50
- 300 MHz