2N5401S Datasheet | KEC

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. Features High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V Low Leakage Current. : ICBO=-50n A(Max.) @VCB=-120V Low Saturation Voltage : VCE(sat)=-0.5V(Max.) @IC=-50m A, IB=-5m A Low Noise : NF=8d B (Max.) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO -160 Collector-Emitter Voltage VCEO -150 Emitter-Base Voltage VEBO -5 Collector Current IC -600 Base Current IB -100 Collector Power Dissipation - 350 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Note : - Package Mounted On 99.5% Alumina 10 8 0.6 ) UNIT V V V m A m A m...