2N5401G Datasheet | onsemi

2N5400, 2N5401 Preferred Device Amplifier Transistors PNP Silicon Features - Pb- Free Packages are Available- http://onsemi. COLLECTOR 3 MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD 625 5.0 PD 1.5 12 TJ, Tstg - 55 to +150 Watts m W/°C °C 12 3 m W m W/°C TO- 92 CASE 29 STYLE 1 2N5400 2N5401 120 130 5.0 600 150 160 Unit Vdc Vdc Vdc m Adc 1 EMITTER 2 BASE Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. MARKING DIAGRAM 2N 540x AYWWG G THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction- to- Ambient Thermal Resistance, Junction- to- Case Symbol Rq JA Rq JC Max 200 83.3 Unit °C/W °C/W A = Assembly Location Y = Year WW = Work Week G = Pb- Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. - For additional information on our Pb- Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Preferred devices are remended choices for future use and best overall value. © Semiconductor ponents Industries, LLC, 2005 December, 2005 - Rev. 1 Publication Order Number: 2N5400/D 2N5400, 2N5401 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise...