2N6520 - PNP Epitaxial Silicon Transistor

Fairchild (now onsemi)

Key Features

High Voltage Transistor.
Collector-Emitter Voltage: VCBO = -350 V.
Collector Dissipation: PC (max) = 625 mW.
Complement to 2N6517 123 Straight Lead Bulk Packing TO-92 1. Emitter 12 3 2. Base 3. Collector Bent Lead Tape & Reel Ammo Packing Ordering Information Part Number 2N6520TA Top Mark 2N6520 Package TO-92 3L Packing Method Ammo Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not fun.

2N6520 pnp epitaxial silicon transistor by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	2N6520
Manufacturer	Fairchild (now onsemi)
File Size	175.67 KB
Description	PNP Epitaxial Silicon Transistor
Datasheet	2N6520 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N6520 — PNP Epitaxial Silicon Transistor September 2015 2N6520 PNP Epitaxial Silicon Transistor Features • High Voltage Transistor • Collector-Emitter Voltage: VCBO = -350 V • Collector Dissipation: PC (max) = 625 mW • Complement to 2N6517 123 Straight Lead Bulk Packing TO-92 1. Emitter 12 3 2. Base 3. Collector Bent Lead Tape & Reel Ammo Packing Ordering Information Part Number 2N6520TA Top Mark 2N6520 Package TO-92 3L Packing Method Ammo Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended.