2N6520 Datasheet | Zetex Semiconductors

FEATURES - 350 Volt VCEO - Gain of 15 at IC=-100m A ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Continuous Collector Current Power Dissipation at Tamb= 25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IB IC Ptot Tj:Tstg E-Line TO92 patible VALUE -350 -350 -5 -250 -500 680 -55 to +200 UNIT V V V m A m A m W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) MIN. -350 -350 -5 -50 -50 -0.3 -0.35 -0.5 -1.0 -0.80 -0.85 -0.90 -2.0 20 30 30 20 15 40 MAX. UNIT V V V n A n A V V V V V V V V CONDITIONS. IC=-100µA, IE=0 IC=-1m A, IB=0- IE=-10µA, IC=0 VCB=-250V, IE=0 VEB=-4V, IC=0 IC=-10m A, IB=-1m A- IC=-20m A, IB=-2m A- IC=-30m A, IB=-3m A- IC=-50m A, IB=-5m A- IC=-10m A, IB=-1m A- IC=-20m A, IB=-2m A- IC=-30m A, IB=-3m A- IC=-100m A, VCE=-10V- IC=-1m A, VCE=-10V IC=-10m A, VCE=-10V- IC=-30m A, VCE=-10V- IC=-50m A, VCE=-10V- IC=-100m A, VCE=-10V- MHz IC=-10m A, VCE=-20V, f=20MHz VBE(sat) VBE(on) h FE 200 200 Transition Frequency f T - Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%...