2N7051 Datasheet | Fairchild Semiconductor

NPN Darlington Transistor - This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. - Sourced from Process 06. - See 2N7052 for Characteristics. TO-92 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings- TA=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Storage Temperature Ratings 100 100 12 1.5 -55 ~ 150 Units V V V A °C - These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These rtings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TA=25°C unless otherwise noted Symbol Off Characteristics BVCEO BVCBO BVEBO ICBO ICES IEBO h FE VCE (sat) VBE (sat) f T hfe Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Small Signal Current Gain On Characteristics - VCE = 5.0V, IC = 100m A VCE = 5.0V, IC = 1.0A IC = 100m A, IB = 0.1m A IC = 100m A, VBE =5.0V IC = 100m A, VCE =5.0V VCE =5.0V, IC = 100m A, f = 20MHz 200 10 100 10,000 1,000 20,000 1.5 2.0 V V MHz Parameter Test Condition IC = 1.0m A, IB = 0 IC = 100µA, IB = 0 IE = 1.0m A, IC = 0 VCB = 80V, IE = 0 VCE = 80V, IE = 0 VEB = 7.0V, IC = 0 Min. 100 100 12 0.1 0.2 0.1 Typ. Max. Units V V V µA µA µA Collector-Emitter Breakdown Voltage - Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Small Signal Characteristics - Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 1.0% ©2002 Fairchild Semiconductor Corporation Rev. A1, August 2002 Thermal Characteristics TA=25°C unless otherwise noted Symbol PD RθJC RθJA Parameter Total Device...