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75N08 - FDP75N08

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Key Features

  • 75A, 75V, RDS(on) = 0.011Ω @VGS = 10 V Low gate charge ( typical 150 nC) Low Crss ( typical 85 pF) Fast switching 100% avalanche tested Improved dv/dt capability TM.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr FDP75N08 75V N-Channel MOSFET June 2006 UniFET FDP75N08 75V N-Channel MOSFET Features • • • • • • 75A, 75V, RDS(on) = 0.011Ω @VGS = 10 V Low gate charge ( typical 150 nC) Low Crss ( typical 85 pF) Fast switching 100% avalanche tested Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.