8N60C - FQB8N60C

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V.
Low gate charge ( typical 28 nC).
Low Crss ( typical 12 pF).
Fast switching.
100% avalanche tested.
Improved dv/dt capability D GS D2-PAK FQB Series GDS I2-PAK FQI Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Curre.

Fairchild Semiconductor

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Datasheet Details

Part number	8N60C
Manufacturer	Fairchild Semiconductor
File Size	705.71 KB
Description	FQB8N60C
Datasheet	8N60C Datasheet
Additional preview pages of the 8N60C datasheet.

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www.DataSheet.co.kr FQB8N60C / FQI8N60C FQB8N60C / FQI8N60C 600V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Features • 7.5A, 600V, RDS(on) = 1.

Published: Dec 4, 2011 |