8N60C Datasheet | Fairchild Semiconductor

.Data Sheet.co.kr FQB8N60C / FQI8N60C FQB8N60C / FQI8N60C 600V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Features - 7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V - Low gate charge ( typical 28 n C) - Low Crss ( typical 12 p F) - Fast switching - 100% avalanche tested - Improved dv/dt capability D2-PAK FQB Series I2-PAK FQI...