Inchange Semiconductor 8N60
N-Channel MOSFET Transistor
| Part No. | 8N60 |
|---|---|
| Datasheet | 8N60 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET Transistor |
| Buy | Stock & Price |
FEATURES
●Drain Current –ID= 7.5A@ TC=25℃●Drain Source Voltage: VDSS= 600V(Min)
●Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max)
●Avalanche Energy Specified
●Fast Switching
●Simple Drive Requirements
●DESCRITION
●Designed for high efficiency switch mode power supply.
●
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL VDSS VGS ID IDM PD Tj Tstg PARAMETER Drain-Source Voltage Gate-Source Voltage-Continuous Drain Current-Continuous Drain Current-Single Plused Total Dissipation @TC=25℃ Max. Operating Junction Temperature Storage Temperature VALUE 600 ±20 7.5 30 147 150 -55~150 UNIT V V A A W ℃ ℃●THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 0.85 62.5 UNIT ℃/W ℃/W isc Website： INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 8N60
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage...