8N60 - N-Channel MOSFET Transistor

Datasheet Summary

Features

Drain Current.
ID= 7.5A@ TC=25℃.
Drain Source Voltage: VDSS= 600V(Min).
Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max).
Avalanche Energy Specified.
Fast Switching.
Simple Drive Requirements.

Inchange

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Datasheet Details

Part number	8N60
Manufacturer	Inchange
File Size	89.62 KB
Description	N-Channel MOSFET Transistor
Datasheet	8N60 Datasheet
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INCHANGE Semiconductor www.DataSheet4U.com isc N-Channel Mosfet Transistor isc Product Specification 8N60 ·FEATURES ·Drain Current –ID= 7.5A@ TC=25℃ ·Drain Source Voltage: VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·DESCRITION ·Designed for high efficiency switch mode power supply. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VDSS VGS ID IDM PD Tj Tstg PARAMETER Drain-Source Voltage Gate-Source Voltage-Continuous Drain Current-Continuous Drain Current-Single Plused Total Dissipation @TC=25℃ Max. Operating Junction Temperature Storage Temperature VALUE 600 ±20 7.

Published: Feb 17, 2009 |