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8N60 Datasheet

The 8N60 is a N-Channel Power MOSFET. Download the datasheet PDF and view key features and specifications below.

Part Number8N60
ManufacturerNell Power Semiconductor
Overview N-Channel Power MOSFET (8A, 600Volts) The Nell 8N60 is a three-terminal silicon device with current conduction capability of 8A, fast switching speed, low on-state resistance, breakdown voltage rati. RDS(ON) = 1.2Ω @ VGS = 10V Ultra low gate charge(36nC max.) Low reverse transfer capacitance (CRSS = 12pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature PRODUCT SUMMARY ID (A) 8 VDSS (V) 600 RDS(ON) (Ω) 1.2 @ VGS = 10V .
Part Number8N60
DescriptionN-CHANNEL POWER MOSFET
ManufacturerUnisonic Technologies
Overview The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged aval. * RDS(ON) < 1.2Ω@VGS = 10 V * Ultra low gate charge ( typical 28 nC ) * Low reverse transfer capacitance ( CRSS = typical 12.0 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness „ SYMBOL Power MOSFET „ ORDERING INFORMATION Note: Ordering Nu.
Part Number8N60
DescriptionN-Channel MOSFET Transistor
ManufacturerInchange Semiconductor
Overview INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 8N60 ·FEATURES ·Drain Current –ID= 7.5A@ TC=25℃ ·Drain Source Voltage: VDSS= 600V(Min) ·Static D.
*Drain Current
  –ID= 7.5A@ TC=25℃
*Drain Source Voltage: VDSS= 600V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max)
*Avalanche Energy Specified
*Fast Switching
*Simple Drive Requirements
*DESCRITION
*Designed for high efficiency switch mode power supply.
*ABSOLUTE MAXIMUM RATINGS(Ta=2.
Part Number8N60
DescriptionN-CHANNEL MOSFET
ManufacturerCHONGQING PINGYANG
Overview 8N60(F,B,H) 8A mps,600 Volts N-CHANNEL MOSFET FEATURE  8A,600V,RDS(ON)=1.0Ω@VGS=10V/4A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 8.
* 8A,600V,RDS(ON)=1.0Ω@VGS=10V/4A
* Low gate charge
* Low Ciss
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability TO-220AB 8N60 ITO-220AB 8N60F TO-263 8N60B TO-262 8N60H Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Sour.