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95N03L - FQB95N03L

General Description

This device employs a new advanced trench MOSFET technology and

Key Features

  • low gate charge while maintaining low on-resistance. Optimized for switching.

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Other Datasheets by Fairchild (now onsemi)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FQB95N03L December 2002 FQB95N03L N-Channel Logic Level PWM Optimized Power MOSFET General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Features • Fast switching • rDS(ON) = 0.0064Ω (Typ), V GS = 10V • rDS(ON) = 0.