Fairchild Semiconductor BC856
PNP EPITAXIAL SILICON TRANSISTOR
| Part No. | BC856 |
|---|---|
| Datasheet | BC856 Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | PNP EPITAXIAL SILICON TRANSISTOR |
| Buy | Stock & Price |
FEATURES
● Switching and AmplifierAPPLICATIONS
● Suitable for automatic insertion in thick and thin-film circuits● Low Noise: BC859, BC860
● Complement to BC846 ... BC850
ABSOLUTE MAXIMUM RATINGS
* Ta = 25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage : BC856 : BC857/860 : BC858/859 VCEO Collector-Emitter Voltage : BC856 : BC857/860 : BC858/859 VEBO Emitter-Base Voltage IC Collector Current (DC) PC Collector Power Dissipation TJ Junction Temperature TSTG Storage Temperature * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.ELECTRICAL CHARACTERISTICS
* Ta=25°C unless otherwise noted Symbol Parameter Test Condition ICBO hFE VCE (sat) VBE (sat) VBE (on) fT Collector Cut-off Current VCB= -30V, IE=0 DC Current Gain VCE= -5V, IC= -2mA Collector-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA IC= -100mA, IB= -5mA Base-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA IC= -100mA, IB= -5mA Base-Emitter On Volt...
