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BCW69 - PNP Transistor

Key Features

  • This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 100mA.
  • Sourced from process 68. 3 2 1 SOT-23 Mark: H1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings.
  • TA = 25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current - Continuous -100 mA TJ, TSTG Junction.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BCW69 — PNP General Purpose Amplifier BCW69 PNP General Purpose Amplifier February 2010 Features • This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 100mA. • Sourced from process 68. 3 2 1 SOT-23 Mark: H1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * TA = 25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current - Continuous -100 mA TJ, TSTG Junction and Storage Temperature -55 to +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.