The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
BCX19
BCX19
NPN Medium Power Transistor
• This device is designed for general purpose amplifiers. • Sourced from process 38.
3
2 1
SOT-23
Mark: U1
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current Junction and Storage Temperature - Continuous Value 45 50 5.0 500 -55 ~ +150 Units V V V mW °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol Parameter Test Condition IC = 10mA, IB = 0 IC = 10µA, IC = 0 VCB = 20V, IE = 0 VCB = 20V, IE = 0, TA = 150°C VEB = 5.0V, IC = 0 IC = 100mA, VCE = 1.0V IC = 300mA, VCE = 1.0V IC = 500mA, VCE = 1.0V IC = 500mA, IB = 50mA IC = 500mA, VCE = 1.0V 100 70 40 Min.
BCX19 Datasheet
