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BCX71J - PNP EPITAXIAL SILICON TRANSISTOR

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BCX71J GENERAL PURPOSE TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (TA=25° C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature • Refer to KS5086 for graphs Symbol VCBO VCEO VEBO IC PC T STG Rating -45 -45 -5 -100 350 150 Unit V V V mA mW °C 1. Base 2. Emitter 3. Collector ELECTRICAL CHARACTERISTICS (TA=25° C) Characteristic Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Symbol BVCEO BVEBO ICES hFE Test Conditions IC= -2mA, IB=0 IE= -1µA, IC=0 VCE= -32V, VBE=0 VCE= -5V, IC= -10µA VCE= -5V, IC= -2mA VCE= -1V, IC= -50mA IC= -10mA, IB= -0.25mA IC= -50mA, IB= -1.25mA IC= -10mA, IB= -0.