Fairchild Semiconductor BD234
PNP Transistor
APPLICATIONS
● Complement to BD 233/235/237 respectively 1 TO-126 2.Collector 3.Base 1. Emitter PNP Epitaxial Silicon TransistorABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BD234 : BD236 : BD238 VCEO Collector-Emitter Voltage : BD234 : BD236 : BD238 Collector-Emitter Voltage : BD234 : BD236 : BD238 Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature - 45 - 60 - 100 - 45 - 60 - 80 - 45 - 60 - 100 -5 -2 -6 25 150 - 65 ~ 150 V V V V V V V V V V A A W °C °C Value Units VCER VEBO IC ICP PC TJ TSTGELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BD234 : BD236 : BD238 Collector Cut-off Current : BD234 : BD236 : BD238 IEBO hFE VCE(sat) VBE(on) fT Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter ON Voltage Current Gain Band...