Fairchild Semiconductor BD676A
PNP Epitaxial Silicon Transistor
| Part No. | BD676A |
|---|---|
| Datasheet | BD676A Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | PNP Epitaxial Silicon Transistor |
| Buy | Stock & Price |
APPLICATIONS
● Medium Power Darlington TR● Complement to BD675A, BD677A, BD679A and BD681 respectively PNP Epitaxial Silicon Transistor
ABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : BD676A : BD678A : BD680A : BD682 1 TO-126 2.Collector 3.Base 1. Emitter Value - 45 - 60 - 80 - 100 - 45 - 60 - 80 - 100 -5 -4 -6 - 100 14 88 150 - 65 ~ 150 Units V V V V V V V V V A A mA W °C/W °C °C VCEO Collector-Emitter Voltage : BD676A : BD678A : BD680A : BD682 Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Thermal Resistance (Junction to Ambient) Junction Temperature Storage Temperature VEBO IC ICP IB PC Rθja TJ TSTGELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : BD676A : BD678A : BD680A : BD682 Collector-Base Voltage : BD676A : BD678A : BD680A : BD682 Test Condition IC = - 50mA, IB = 0 Min. - 45 - 60 - 80 - 100 - 200 - 200 - 200 - 200 - 500 - 500 - 500 - 500 -2 750 750 - 2.8 - 2.5 - 2.5 - 2.5 V V V V µA µA µA µA µA µA µA µA mA Typ.
