Download BD676A Datasheet PDF
Inchange Semiconductor
BD676A
BD676A is PNP Transistor manufactured by Inchange Semiconductor.
isc Silicon PNP Darlington Power Transistor DESCRIPTION - Collector- Emitter Breakdown Voltage- : V(BR)CEO = -45 V - DC Current Gain- : hFE = 750(Min) @ IC= -2 A - plement to Type BD675A - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for use as output devices in plementary general-purpose amplifier...