BD676A - PNP Transistor

Inchange Semiconductor

General Description

Collector Emitter Breakdown Voltage : V(BR)CEO = -45 V DC Current Gain : hFE = 750(Min) @ IC= -2 A Complement to Type BD675A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as output d

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Datasheet Details

Part number	BD676A
Manufacturer	Inchange Semiconductor
File Size	185.35 KB
Description	PNP Transistor
Datasheet	BD676A Datasheet

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = -45 V ·DC Current Gain— : hFE = 750(Min) @ IC= -2 A ·Complement to Type BD675A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devices in complementary general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -45 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A IB Base Current PC Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature Range -0.