Download BD678A Datasheet PDF
Inchange Semiconductor
BD678A
DESCRIPTION - Collector- Emitter Breakdown Voltage- : V(BR)CEO = -60V - DC Current Gain- : h FE = 750(Min) @ IC= -2 A - plement to Type BD677A - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for use as output devices in plementary general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 VCEO Collector-Emitter Voltage -60 VEBO Emitter-Base Voltage -5 Collector Current-Continuous -4 Base Current Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature...
BD678A reference image

Representative BD678A image (package may vary by manufacturer)