Download BD677A Datasheet PDF
Inchange Semiconductor
BD677A
DESCRIPTION - Collector- Emitter Breakdown Voltage- : V(BR)CEO = 60V - DC Current Gain- : h FE = 750(Min) @ IC= 2 A - plement to Type BD678A - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for use as output devices in plementary general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current-Continuous - Collector Current (Pulse) Base Current Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature Range ℃ -55~150...
BD677A reference image

Representative BD677A image (package may vary by manufacturer)