BD676
BD676 is PNP Transistor manufactured by Inchange Semiconductor.
isc Silicon PNP Darlington Power Transistor
DESCRIPTION
- Collector- Emitter Breakdown Voltage-
: V(BR)CEO = -45 V
- DC Current Gain-
: hFE = 750(Min) @ IC= -1.5 A
- plement to Type BD675
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use as output devices in plementary general-purpose amplifier...
