BD676
Overview
Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45 V DC Current Gain- : hFE = 750(Min) @ IC= -1.5 A Complement to Type BD675 Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part | BD676 |
|---|---|
| Description | PNP Transistor |
| Category | Transistor |
| Manufacturer | Inchange Semiconductor |
| Size | 184.98 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| BD676 | onsemi | PNP Silicon Transistor |
| BD676A | onsemi | DARLINGTON POWER TRANSISTORS PNP SILICON |
| BD676 | Motorola Semiconductor | PNP Transistor |
| BD676A | Fairchild Semiconductor | PNP Epitaxial Silicon Transistor |
| BD676A | Motorola Semiconductor | PNP Transistor |