BD676 datasheet by Inchange Semiconductor.
| Part number | BD676 |
|---|---|
| Datasheet | BD676-INCHANGE.pdf |
| File Size | 184.98 KB |
| Manufacturer | Inchange Semiconductor |
| Description | PNP Transistor |
|
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·Collector Emitter Breakdown Voltage : V(BR)CEO = -45 V ·DC Current Gain : hFE = 750(Min) @ IC= -1.5 A ·plement to Type BD675 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devices in plementary general-purpose amplifier applications.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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BD676 | PNP Transistor | Motorola Inc |
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BD676 | PNP Silicon Transistor | ON Semiconductor |
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BD676 | SILICON PNP TRANSISTOR | Central Semiconductor |
 |
BD676 | PNP DARLIGNTON POWER SILICON TRANSISTORS | CDIL |
 |
BD676 | Power Transistor | Comset Semiconductors |
View all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| BD676A | PNP Transistor |
| BD675 | NPN Transistor |
| BD675A | NPN Transistor |
| BD677 | NPN Transistor |
| BD677A | NPN Transistor |
| BD678 | PNP Transistor |
| BD678A | PNP Transistor |
| BD679 | NPN Transistor |
| BD679A | NPN Transistor |
| BD609 | NPN Transistor |
