Datasheet Details
| Part number | CNY171M |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 307.69 KB |
| Description | Phototransistor Optocouplers |
| Datasheet |
 CNY171M Datasheet
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General Description
The CNY17XM, CNY17FXM, and MOC8106M devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in-line package.
Figure 1.
Key Features
- High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M).
- Closely Matched Current Transfer Ratio (CTR) Minimizes Unit-to-Unit Variation.
- Current Transfer Ratio In Select Groups.
- Very Low Coupled Capacitance Along With No Chip-to-Pin 6 Base Connection for Minimum Noise Susceptability (CNY17FXM, MOC8106M).
- Safety and Regulatory Approvals:.
- UL1577, 4,170 VACRMS for 1 Minute.
- DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage.