Datasheet Summary
6-Pin DIP High BVCEO Phototransistor Optocouplers
CNY17 Series, MOC8106M
Description The CNY17XM, CNY17FXM, and MOC8106M devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in- line package.
Features
- High BVCEO: 70 V Minimum
(CNY17XM, CNY17FXM, MOC8106M)
- Closely Matched Current Transfer Ratio (CTR) Minimizes
Unit- to- Unit Variation
- Current Transfer Ratio In Select Groups
- Very Low Coupled Capacitance Along With
No Chip- to- Pin 6 Base Connection for Minimum Noise Susceptibility (CNY17FXM, MOC8106M)
- Safety and Regulatory Approvals:
UL1577, 4,170 VACRMS for 1 Minute DIN- EN/IEC60747- 5- 5, 850 V Peak Working
Insulation...
