CNY17F1M - Phototransistor Optocouplers

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	CNY17F1M
Manufacturer	Fairchild Semiconductor
File Size	307.69 KB
Description	Phototransistor Optocouplers
Datasheet	CNY17F1M Datasheet
Note	This datasheet PDF includes multiple part numbers: CNY17F1M, CNY171M. Please refer to the document for exact specifications by model.
Additional preview pages of the CNY17F1M datasheet.

Product details

Description

The CNY17XM, CNY17FXM, and MOC8106M devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in-line package.

Features

High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M).
Closely Matched Current Transfer Ratio (CTR) Minimizes Unit-to-Unit Variation.
Current Transfer Ratio In Select Groups.
Very Low Coupled Capacitance Along With No Chip-to-Pin 6 Base Connection for Minimum Noise Susceptability (CNY17FXM, MOC8106M).
Safety and Regulatory Approvals:.
UL1577, 4,170 VACRMS for 1 Minute.
DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage.

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Other Datasheets by Fairchild Semiconductor

CNY17F1 - (CNY17F1 - CNY17F4) Phototransistor Optocouplers
CNY17F-1 - 6-PIN DIP OPTOCOUPLERS
CNY17F-2 - 6-PIN DIP OPTOCOUPLERS
CNY17F-3 - 6-PIN DIP OPTOCOUPLERS
CNY17F-4 - 6-PIN DIP OPTOCOUPLERS
CNY17F-X - 6-PIN DIP OPTOCOUPLERS

Published: Oct 8, 2014 |