CNY17F1M - Phototransistor Optocouplers

This page provides the datasheet information for the CNY17F1M, a member of the CNY171M Phototransistor Optocouplers family.

Product Overview

Fairchild Semiconductor

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Datasheet Details

Part number	CNY17F1M
Manufacturer	Fairchild Semiconductor
File Size	307.69 KB
Description	Phototransistor Optocouplers
Datasheet	CNY17F1M Datasheet
Additional preview pages of the CNY17F1M datasheet.

CNY17F1M Product details

Description

The CNY17XM, CNY17FXM, and MOC8106M devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in-line package.

Figure 1.

Features

High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M).
Closely Matched Current Transfer Ratio (CTR) Minimizes Unit-to-Unit Variation.
Current Transfer Ratio In Select Groups.
Very Low Coupled Capacitance Along With No Chip-to-Pin 6 Base Connection for Minimum Noise Susceptability (CNY17FXM, MOC8106M).
Safety and Regulatory Approvals:.
UL1577, 4,170 VACRMS for 1 Minute.
DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage.

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Other Datasheets by Fairchild Semiconductor

CNY17F1 - (CNY17F1 - CNY17F4) Phototransistor Optocouplers
CNY17F-1 - 6-PIN DIP OPTOCOUPLERS
CNY17F-2 - 6-PIN DIP OPTOCOUPLERS
CNY17F-3 - 6-PIN DIP OPTOCOUPLERS
CNY17F-4 - 6-PIN DIP OPTOCOUPLERS
CNY17F-X - 6-PIN DIP OPTOCOUPLERS
CNY17F2 - (CNY17F1 - CNY17F4) Phototransistor Optocouplers
CNY17F2M - Phototransistor Optocouplers

Published: Oct 8, 2014 |