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CNY17F1M Datasheet Phototransistor Optocouplers

Manufacturer: Fairchild (now onsemi)

Overview: CNY17XM, CNY17FXM, MOC8106M — 6-Pin DIP High BVCEO Phototransistor Optocouplers October 2014 CNY171M, CNY172M, CNY173M, CNY174M, CNY17F1M, CNY17F2M, CNY17F3M, CNY17F4M, MOC8106M 6-Pin DIP High BVCEO Phototransistor.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The CNY17XM, CNY17FXM, and MOC8106M devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in-line package.

Package Outlines Figure 1.

Package Outlines Schematics ANODE 1 6 NC ANODE 1 6 BASE CATHODE 2 5 COLLECTOR CATHODE 2 5 COLLECTOR NC 3 4 EMITTER NC 3 4 EMITTER CNY17F1M/2M/3M/4M MOC8106M Figure 2.

Key Features

  • High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M).
  • Closely Matched Current Transfer Ratio (CTR) Minimizes Unit-to-Unit Variation.
  • Current Transfer Ratio In Select Groups.
  • Very Low Coupled Capacitance Along With No Chip-to-Pin 6 Base Connection for Minimum Noise Susceptability (CNY17FXM, MOC8106M).
  • Safety and Regulatory Approvals:.
  • UL1577, 4,170 VACRMS for 1 Minute.
  • DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage.

More Datasheets from Fairchild (now onsemi)

Part Number Description
CNY17F1 (CNY17F1 - CNY17F4) Phototransistor Optocouplers
CNY17F-1 6-PIN DIP OPTOCOUPLERS
CNY17F-2 6-PIN DIP OPTOCOUPLERS
CNY17F-3 6-PIN DIP OPTOCOUPLERS
CNY17F-4 6-PIN DIP OPTOCOUPLERS
CNY17F-X 6-PIN DIP OPTOCOUPLERS
CNY17F2 (CNY17F1 - CNY17F4) Phototransistor Optocouplers
CNY17F2M Phototransistor Optocouplers
CNY17F3 (CNY17F1 - CNY17F4) Phototransistor Optocouplers
CNY17F3M Phototransistor Optocouplers

CNY17F1M Distributor