CNY17F1M Overview
The CNY17XM, CNY17FXM, and MOC8106M devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in-line package. Package Outlines Figure 1. Schematics CNY171M/2M/3M/4M ©2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC8106M Rev.
CNY17F1M Key Features
- High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M)
- Closely Matched Current Transfer Ratio (CTR) Minimizes Unit-to-Unit Variation
- Current Transfer Ratio In Select Groups
- Safety and Regulatory Approvals
- UL1577, 4,170 VACRMS for 1 Minute
- DIN-EN/IEC60747-5-5, 850 V Peak Working