D14N05L Datasheet | Fairchild Semiconductor

feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is acplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V-5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA09870. Features - 14A, 50V - r DS(ON) = 0.100Ω - Temperature pensating PSPICE® Model - Can be Driven Directly from CMOS, NMOS, and TTL Circuits - Peak Current vs Pulse Width Curve - UIS Rating Curve - 175o C Operating Temperature - Related Literature - TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards” Ordering Information PART NUMBER RFD14N05L RFD14N05LSM RFP14N05L PACKAGE TO-251AA TO-252AA TO-220AB BRAND 14N05L 14N05L F14N05L Symbol NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in the tape and reel, i.e., RFD14N05LSM9A. Packaging JEDEC TO-251AA SOURCE DRAIN GATE DRAIN (FLANGE) JEDEC TO-252AA DRAIN (FLANGE) GATE SOURCE JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) .. ©2004 Fairchild Semiconductor Corporation RFD14N05L, RFD14N05LSM, RFP14N05L Rev. B1 RFD14N05L, RFD14N05LSM, RFP14N05L Absolute Maximum Ratings TC = 25o C, Unless Otherwise Specified RFD14N05L, RFD14N05LSM, RFP14N05L 50 50 ±10 14 Refer to Peak Current Curve Refer to UIS Curve 48 0.32 -55 to 175 300 260 UNITS V V V A Drain to Source Voltage (Note 1)- - - - - - - . . VDSS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) - - - - - . VDGR Gate to Source Voltage - - -...