Fairchild Semiconductor D45H2A
PNP Power Amplifier
| Part No. | D45H2A |
|---|---|
| Datasheet | D45H2A Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | PNP Power Amplifier |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise noted Symbol VCEO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 30 8.0 - 55 ~ 150 Units V A °CELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted Symbol Off Characteristics V(BR)CEO ICBO IEBO hFE Parameter Test Condition IC = 100mA, IB = 0 VCB = 60V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 8A VCE = 5V, IC = 10A VCE = 5V, IC = 12A IC = 8A, IB = 0.4A IC = 8A, IB = 0.8A VCE = 10V, IC = 500mA 25 100 80 65 1 1.5 V V MHz Min. 30 10 100 Typ. Max. Units V µA µA Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain On Characteristics VCE(sat) VBE(sat) fT Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Small Signal Characteristics Thermal Characteristics TA=25°C unless otherwise noted Symbol PD RθJC RθJA Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max.
