Inchange Semiconductor D45H2A
This device is designed for power amplifier,regulator and Switching circuits where speed is important ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range -16 A 60 W -55~150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.1 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W D45H2A isc website:... The information contained herein is presented only as a guide for the applications of our products.