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D45H2A - PNP Transistor

General Description

Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A Fast Switching Speeds Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This device is designed for power amplifier,regulator and Switching circuits where speed

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isc Silicon PNP Power Transistors DESCRIPTION ·Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A ·Fast Switching Speeds ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·This device is designed for power amplifier,regulator and Switching circuits where speed is important ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range -16 A 60 W -55~150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.