FCA16N60N Datasheet | Fairchild Semiconductor

FCA16N60N N-Channel MOSFET August 2009 TM SupreMOS N-Channel MOSFET 600V, 16A, 0.170Ω Features - RDS(on) = 0.17Ω ( Typ.)@ VGS = 10V, ID = 8A - Ultra low gate charge ( Typ. Qg = 40.2nC) - Low effective output capacitance - 100% avalanche tested - RoHS pliant Description The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements for...