FCA22N60N Datasheet | Fairchild Semiconductor

- N-Channel SupreMOS® MOSFET N-Channel SupreMOS® MOSFET 600 V, 22 A, 165 mΩ May 2014 Features - BVDSS > 650 V @ TJ = 150oC - RDS(on) = 140 mΩ (Typ.) @ VGS = 10 V, ID = 11 A - Ultra Low Gate Charge (Typ. Qg = 45 nC) - Low Effective Output Capacitance (Typ. Coss(eff.) = 196.4 pF) - 100% Avalanche Tested - RoHS pliant Application - PDP TV - Solar Inverter - AC-DC Power Supply Description The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp...